Method for evaluating semiconductor substrate

ABSTRACT

The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided.

TECHNICAL FIELD

The present invention relates to a method for evaluating a semiconductorsubstrate.

BACKGROUND ART

Miniaturization has been advance to realize LSI high performance, and agate length has been reduced. Since the gate length has been reduced, adiffusion depth of a source/drain region must be decreased. For example,in case of a device (a transistor) having a gate length of approximately30 nm, a source/drain portion has a diffusion length of approximately 15nm, and very shallow diffusion is required.

In conventional examples, to form such a diffusion layer, ionimplantation is used, and a method for implanting, e.g., B⁺ or BF₂ ⁺⁺ atvery low acceleration of 0.2 to 0.5 keV is adopted. However, atoms whichhave undergone the ion implantation cannot reduce a resistance thereofas they are. Further, in a region where the ion implantation has beencarried out, point defects such as interstitial silicon or atomicvacancies are produced in a silicon substrate.

Thus, after the ion implantation, annealing is performed to activate theatoms (reduce the resistance) and recover the defects, but theion-implanted atoms diffuse and an impurity distribution spreads due tothis annealing. Furthermore, there is also known a phenomenon thatimpurity diffusion is accelerated by not only the annealing but also thepoint defects produced due to the ion implantation.

To enable formation of a shallow p-n junction of 10 nm or less in atransverse direction immediately below an ion implantation mask at adepth of 15 nm or less even though the spread of diffusion is taken intoconsideration, an annealing method of applying high energy in a veryshort time has been examined and adopted (see, e.g., Patent Literature1).

As this method for annealing, there is, e.g., annealing which uses aflash lamp having a rare gas such as xenon enclosed therein. This lampis a method for applying high energy of tens of J/cm² or more as pulselight of 0.1 to 100 milliseconds. Thus, activation can be carried outwithout substantially changing the impurity distribution formed by theion implantation.

However, since this high energy is used, it can be considered thatthermal stress in the silicon substrate increases and damage such ascracks or slips of the silicon substrate are caused, and an examinationfor this has been actually conducted.

For example, Patent Literature 2 has a description in which, to form ashallow impurity diffusion region without causing damage in asemiconductor substrate, materials having a material which serves as anacceptor or a donor to the semiconductor substrate and a material whichdoes not serve as the acceptor or the donor to the semiconductorsubstrate are implanted into the semiconductor substrate.

It is known that crystal defects such as point defects are recovered bya heat treatment as described above. However, particulars of thisrecovery process are not known, and hence performing precise defectcontrol is difficult in conventional methods.

CITATION LIST Patent Literatures

Patent Literature 1: Japanese Unexamined Patent Publication No.2005-347704

Patent Literature 2: Japanese Unexamined Patent Publication No.2009-027027

SUMMARY OF INVENTION Technical Problem

In view of the problem, it is an object of the present invention toprovide a method for evaluating a semiconductor substrate which canevaluate a recovery process of crystal defects.

Solution to Problem

To achieve the object, the present invention provides a method forevaluating a semiconductor substrate subjected to a defect recovery heattreatment to recover a crystal defect in the semiconductor substratehaving the crystal defect, flash lamp annealing being performed as thedefect recovery heat treatment,

the method including steps of:

measuring the crystal defect in the semiconductor substrate, which isbeing recovered, by controlling treatment conditions for the flash lampannealing; and

analyzing a recovery mechanism of the crystal defect on the basis of aresult of the measurement.

Such a method for evaluating a semiconductor substrate enablesaccurately evaluating the recovery process of the crystal, defect. Inparticular, the defect recovery heat treatment is performed in the formof the flash lamp annealing (FLA), a state in the process of recoveringthe crystal defect can be frozen and measured by controlling theconditions for this treatment, and hence behavior of the crystal defectin the recovery process can be grasped. Grasping this defect behaviorenables evaluating which defect recovery heat treatment is effective forexecution of the precise defect control.

Further, at the step of performing the measurement, a measurement ispreferably further performed after recovery of the crystal defect.

Since such a method for evaluating a semiconductor substrate enablescomparing states of the semiconductor substrate during and after therecovery of the crystal defect with each other, and hence the recoveryprocess of the crystal defect can be evaluated in further detail.

Furthermore, the treatment condition for the flash lamp annealing to bechanged is preferably a heat treatment time or irradiation energy.

Such a method for evaluating a semiconductor substrate enables observingthe defect recovery behavior in further detail. In particular, changinga heat treatment time enables observing the defect recovery behaviorwith time.

Moreover, the crystal defect is preferably an ion implantation defectproduced by implanting ions into the semiconductor substrate.

The present invention is particularly suitable for evaluating therecovery process of the ion implantation defect such as a point defectproduced by implanting ions into the semiconductor substrate.

Additionally, at the step of performing the measurement, a state beforean emission line produced due to the crystal defect provided by aluminescence method is annihilated is preferably measured at least once,and also a state after the emission line is annihilated is preferablymeasured.

Such a method for evaluating a semiconductor substrate enables analyzingunder which treatment conditions how the crystal defect in thesemiconductor substrate is annihilated at a subsequent step (a step ofanalyzing a recovery mechanism).

At this time, the luminescence method is preferably a cathodeluminescence method.

In the present invention, for example, it is preferable to use such amethod to evaluate a silicon semiconductor substrate.

Further, at the step of performing the analysis, the recovery mechanismis preferably analyzed by observing a change in intensity of theemission line.

According to the evaluation method having such an analyzing step, thedefect recovery behavior can be observed in more detail, and hence therecovery mechanism can be analyzed in further detail.

Furthermore, the semiconductor substrate is preferably a siliconsemiconductor substrate.

The present invention is particularly preferable for evaluating thedefect recovery process of the silicon semiconductor substrate havingthe crystal defect.

Advantageous Effects of Invention

The method for evaluating a semiconductor substrate according to thepresent invention enables accurately evaluating the recovery process ofthe crystal defect. In particular, since an ongoing process of therecovery of the crystal defect can be measured by performing the flashlamp annealing as the defect recovery heat treatment, behavior of thecrystal defect during the recovery process can be grasped. Furthermore,when the semiconductor substrate is measured by using the luminescencemethod, the behavior of the crystal defect during the recovery processcan be grasped in further detail. Grasping this defect behavior enablesevaluating which defect recovery heat treatment is effective forexecution of precise defect control.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows CL spectrums provided as a result of measuring a siliconsemiconductor substrate immediately after ion implantation, duringrecovery of a crystal defect, and after the recovery of the crystaldefect based on a cathode luminescence (CL) method, respectively; and

FIG. 2 shows CL spectrums provided as a result of measuring a siliconsemiconductor substrate subjected to a defect recovery heat treatment inthe form of flash lamp annealing and a silicon semiconductor substratesubjected to the same in the form of a rapid-heating and rapid-coolingheat treatment by using the CL method, respectively.

DESCRIPTION OF EMBODIMENTS

The present invention will now be more specifically describedhereinafter.

As described above, a method for evaluating a semiconductor substratewhich enables evaluating a recovery process of a crystal defect has beendemanded.

As a result of intensive studies, the present inventors have found outthat the problem can be solved by a method for evaluating asemiconductor substrate subjected to a defect recovery heat treatment torecover a crystal defect in the semiconductor substrate having thecrystal defect,

flash lamp annealing being performed as the defect recovery heattreatment,

the method including steps of:

measuring the crystal defect in the semiconductor substrate, which isbeing recovered, by controlling treatment conditions for the flash lampannealing; and

analyzing a recovery mechanism of the crystal defect on the basis of aresult of the measurement, thereby bringing the method for evaluating asemiconductor substrate according to the present invention tocompletion.

Although an embodiment of the present invention will now be specificallydescribed hereinafter, the present invention is not restricted thereto.

[Step of Preparing Semiconductor Substrate Having Crystal Defect]

First, a silicon semiconductor substrate, e.g., a P-type silicon waferhaving a dopant such as boron doped therein is prepared. Then, animpurity diffusion layer is formed on a surface of this wafer. Theimpurity diffusion layer can be formed by ion-implanting the dopant,e.g., boron. An ion implantation defect such as a point defect is formedin the silicon semiconductor substrate by this ion implantation.

[Step of Measuring Crystal Defect]

Then, the crystal defect in the semiconductor substrate subjected to adefect recovery heat treatment is measured. In the present invention,the defect recovery heat treatment is performed in the form of flashlamp annealing, and the crystal defect in the semiconductor substratewhich is in the process of recovery is measured by controlling treatmentconditions for the flash lamp annealing. According to the presentinvention, since a state of the crystal defect during the recovery canbe measured, and hence behavior of the crystal defect in the process ofrecovery which is not revealed in the conventional examples can begrasped.

As a method of the defect recovery heat treatment in the presentinvention, there is, e.g., annealing using a flash lamp having a raregas such as xenon enclosed therein, but the flash lamp annealing is notrestricted thereto, and any method which applies high energy in a veryshort time can suffice.

Moreover, the crystal defect in the semiconductor substrate in theprocess of recovery may be measured only once, but the annealing may becarried out under a plurality of treatment conditions, which is use of aflash lamp, and the measurement may be performed more than once. Whenthe measurement is performed more than once, the behavior of the crystaldefect can be grasped in more detail.

At this time, it is preferable to likewise perform the measurement afterthe recovery of the crystal defect at the step of carrying out themeasurement. Consequently, a state of the semiconductor substrate duringthe recovery of the crystal defect can be compared with the counterpartafter the recovery of the same, and hence the recovery process of thecrystal defect can be evaluated in more detail.

Additionally, at the step of performing the measurement, it ispreferable to likewise measure the crystal defect in the semiconductorsubstrate before effecting the defect recovery heat treatment.Consequently, it is possible to compare states of the semiconductorsubstrate immediately after production of the crystal defect, during therecovery of the crystal defect, and after the recovery of the crystaldefect with each other, and hence the recovery process of the crystaldefect can be evaluated in more detail.

At this time, the treatment condition for the flash lamp annealing to bechanged is preferably a heat treatment time or irradiation energy.Consequently, the defect recovery behavior can be observed in moredetail. In particular, the defect recovery behavior can be observed withtime by changing a heat treatment time.

As a measuring method which can be adopted in the step of performing themeasurement, there is, e.g., a luminescence method such as a cathodeluminescence (CL) method.

In this case, at the step of performing the measurement, it ispreferable to measure at least once a state before an emission line (forexample, a D1, D2, or D3 line produced due to a dislocation provided bythe CL method) produced due to the crystal defect provided by theluminescence method is annihilated, and to further measure a state afterthe emission line is annihilated. Consequently, at a later-describedstep of analyzing a recovery mechanism, it is possible to analyze underwhich treatment conditions how the crystal defect in the semiconductorsubstrate is annihilated.

Among the luminescence methods, it is particularly preferable to adoptthe cathode luminescence method at the time of measuring the siliconsemiconductor substrate. According to the cathode luminescence method,it is possible to evaluate a stress/damage distribution, a defectdistribution, and a carrier distribution of a sample with high spatialresolution while using an electron beam as a probe. The cathodeluminescence means light emission in anultraviolet/visible/near-infrared region emitted when the electron beamis applied to the sample.

Although the mechanism of light emission in this CL method variesdepending on materials, in case of a semiconductor, there are (1)generation of an electron-hole pair, (2) diffusion of a carrier, and (3)radiative recombination. In case of silicon, a TO phonon line (a TOline) corresponding to a band gap (approximately 1.1 eV) is intensivelyobserved. This is an interband transition involving phonon emissionsince silicon is an indirect transition semiconductor. When a crystaldefect or an impurity forms an energy level in a band gap, lightemission (a D1, D2, or D3 line or the like) via this defect or impurityoccurs besides the interband transition light emission.

As regards an apparatus, a scanning electron microscope (SEM) isgenerally used as an electron beam source, and it is preferable to usean apparatus including a detector/spectroscope which detects lightemission from a sample and a mechanism for, e.g., stage cooling tosuppress lattice vibration and provide light emission intensity. As canbe understood from an outline of the apparatus using the SEM as theelectron beam source, the CL method is characterized in that acomparison with an SEM image is possible, an emission spectrum with awide wavelength can be provided, and a depth analysis is possible bychanging high resolution and an acceleration voltage.

Here, a description will now be given as to a case where the defectrecovery heat treatment for recovery of a defect and activation isperformed to the silicon semiconductor substrate having the crystaldefect, and then CL spectrums (emission spectrums) are provided by usingthe cathode luminescence method. FIG. 1 shows CL spectrums provided as aresult of measuring the silicon semiconductor substrate immediatelyafter the ion implantation, during the recovery of the crystal defect,and after the recovery of the crystal defect based on the cathodeluminescence method, respectively. In FIG. 1, an axis of ordinaterepresents emission intensity, and an axis of abscissa represents awavelength. As shown in FIG. 1, the defect recovery process can begradually measured by changing a heat treatment time of the flash lampannealing.

[Step of Analyzing Recovery Mechanism]

Subsequently, on the basis of a result of the measurement, a recoverymechanism of the crystal defect is analyzed. In the present invention,behavior of the crystal defect in the recovery process can be grasped bymeasuring the crystal defect in the semiconductor substrate which isbeing recovered as described above, and the recovery mechanism can beanalyzed. When the semiconductor substrate is further measuredimmediately after the ion implantation or after the recovery of thedefect at the step of performing the measurement, the recovery mechanismcan be analyzed in more detail at this step.

When the luminescence method, e.g., the cathode luminescence method isused at the step of performing the measurement, it is preferable toanalyze the recovery mechanism by observing changes in intensity of theemission line provided by the luminescence method. As the defectrecovery heat treatment advances, the crystal defect continues torecover, and hence the intensity of the emission line caused due to thecrystal defect provided by the luminescence method is also relativelydecreased. Thus, it is possible to evaluate under which treatmentconditions how the crystal defect is annihilated or whether the crystaldefect can be assuredly prevented from staying by observing theintensity of the emission line.

Here, the method for analyzing the recovery mechanism from the CLspectrums in FIG. 1 will now be described. As shown in FIG. 1,immediately after the ion implantation, the D1, D2, and D3 lines and thelike caused due to dislocation are observed besides the TO line arisingfrom band edge emission of silicon, and hence complicated spectrums areshown. However, as the annealing advances, the crystal defect continuesto recover, and hence characteristic emission differs. That is, theintensity of the emission line caused due to the crystal defect isrelatively decreased. When the recovery of the crystal defect isachieved, characteristic emission disappears. When the behavior of thedefect is analyzed from the characteristic emission behavior, thesemiconductor substrate subjected to the defect recovery heat treatmentcan be evaluated.

According to the present invention, a state in the defect recoveryprocess can be frozen by using the flash lamp annealing, and the defectbehavior which cannot be observed by the conventional annealing methodcan be grasped. Thus, it is possible to evaluate which defect recoveryheat treatment is effective for execution of precise defect control.Further, since the defect recovery process can be gradually measured,treatment conditions such as an optimum heat treatment time orirradiation energy can be examined in accordance with each semiconductorsubstrate to be used.

[Use Application of Present Invention]

The present invention is preferable for evaluation of a recovery processof a crystal defect in the semiconductor substrate, especially an ionimplantation defect caused at the time of forming a junction. Inparticular, it is preferable for evaluation of a defect recovery process(defect behavior) when a defect recovery heat treatment is applied to asemiconductor substrate subjected to high-concentration ion implantationlike a source/drain, a gate electrode, or a well. Thus, the presentinvention can be adapted to manufacture of a semiconductor substratehaving an impurity diffusion layer formed on a surface thereof.

EXAMPLES

The present invention will now be more specifically describedhereinafter with reference to examples and comparative examples, but thepresent invention is not restricted to these examples.

Relationship Between Defect Recovery Behavior and Heat Treatment TimeExample 1

As a sample, an N-type silicon wafer which has phosphor doped thereinand has a diameter of 200 mm was used. This silicon wafer has aresistivity of 10 Ω·cm. Boron was ion-implanted into this wafer with 10keV and 1×10¹³ atoms/cm². Then, as shown in FIG. 1, a CL spectrum of thewafer immediately after the ion implantation was first obtained by usingthe cathode luminescence method. Subsequently, flash lamp annealingusing a xenon lamp as a light source was performed to this wafer at 550°C. of preliminary heating. At this time, the annealing was performedunder two types of treatment conditions (irradiation energy of 22 J/cm²,an irradiation time of 0.6 milliseconds, an irradiation temperature of1100° C.; and irradiation energy of 22 J/cm², an irradiation time of 1.2milliseconds, an irradiation temperature of 1100° C.) Then, as shown inFIG. 1, CL spectrums of the wafer after performing the annealing underthe two types of treatment conditions were obtained, respectively.

FIG. 1 shows CL spectrums representing a recovery process of a crystaldefect provided by FLA after the ion implantation. It is possible to seethe process in which the emission center is decreased as the annealingadvances immediately after the ion implantation as described above.Immediately after the ion implantation, disturbance in crystallinityoccurs, intensity of the CL spectrums (TO lines) is weak, and manyemission defects are observed. When the FLA is performed for a shorttime, light emission (a D1 line to a D3 line) caused due to the crystaldefect in light emission observed in the CL spectrums is reduced ascompared with that after the ion implantation, and further performingthe annealing results in observation of no characteristic emission. Asdescribed above, in the present invention, the defect recovery behaviorcan be observed with time. Consequently, the recovery process of thecrystal defect in the semiconductor substrate can be evaluated.

Difference in CL Spectrum Provided by Annealing Technique Example 2Evaluation Method Using Flash Lamp Annealing

As a sample, an N-type silicon wafer which has phosphor doped thereinand has a diameter of 200 mm was used. This silicon wafer has aresistivity of 10 Ω·cm. Boron was ion-implanted into this wafer with 10keV and 5×10¹³ atoms/cm², and flash lamp annealing (annealing conditionsare irradiation energy of 22 J/cm², 1.2 milliseconds, and an irradiationtemperature of 1100° C.) using a xenon lamp as a light source wasperformed to this wafer at 550° C. of preliminary heating. Then, an ionimplantation defect was evaluated.

Comparative Example 1 Evaluation Method Using RTA Treatment

As a sample, an N-type silicon wafer which has phosphor doped thereinand has a diameter of 200 mm was used. This silicon wafer has aresistivity of 10 Ω·cm. Boron was ion-implanted into this wafer with 10keV and 5×10¹³ atoms/cm², and a rapid-heating and rapid-cooling heattreatment (an RTA treatment) was performed at 1000° C./30 seconds. Then,an ion implantation defect was evaluated.

In Example 2 and Comparative Example 1, the ion implantation defectswere first evaluated on the basis of observation using a transmissionelectron microscope (TEM), but no defect was observed with the TEM inregions where the ion implantation was performed. Then, as shown in FIG.2, an evaluation was performed by using the cathode luminescence. FIG. 2shows CL spectrums provided as a result of measuring the siliconsemiconductor substrate subjected to the defect recovery heat treatmentbased on the flash lamp annealing and the silicon semiconductorsubstrate subjected to the rapid-heating and rapid-cooling heattreatment by the CL method, respectively. In FIG. 2, an axis of ordinaterepresents emission intensity, and an axis of abscissa represents awavelength. In Example 2, broad characteristic light emission isobserved besides a TO line (corresponding to a peak with a wavelength ofapproximately 1120 nm), but nothing was observed except the TO line inComparative Example 1.

It can be considered that a difference in detection sensitivity betweenthe evaluation based on the TEM observation and the evaluation using theCL is made for the following reason. That is, the TEM has a narrowobservation region and is hard to capture a point detect as an imageand, on the other hand, the CL has a large observation region (a depthdirection in particular) since a scanning electron microscope (SEM) isused and detects the emission center of a deep level in principle, andhence the CL has higher detection sensitivity.

As described above, in Comparative Example 1 where the RTA treatment wasperformed as the defect recovery heat treatment, nothing was observedexcept the TO line, no defect recovery behavior was observed, and henceit was impossible to evaluate the recovery process of the crystal defectin the semiconductor substrate. On the other hand, in Example 2 wherethe flash lamp annealing was performed as the defect recovery heattreatment, many emission lines were observed besides the TO line. Theseemission lines represent the ion implantation defect behavior during thedefect recovery process. Consequently, the recovery process of thecrystal defect in the semiconductor substrate was successfullyevaluated.

In Example 2 where an ion implantation amount is higher than that inExample 1 in particular, many emission defects were observed even underthe same conditions (the irradiation energy of 22 J/cm², 1.2milliseconds, and the irradiation temperature of 1100° C.). Thus, on thebasis of the results of Examples 1 and 2, it was possible to evaluatethat an optimum heat treatment time to recover the crystal defectdiffers when the defect recovery heat treatment is performed to thesemiconductor substrates having different ion implantation amounts,respectively.

Furthermore, it can be understood from the results of Example 2 andComparative Example 1 that the flash lamp annealing must be performed asthe defect recovery heat treatment to evaluate the recovery process ofthe crystal defect (in particular, to measure the ongoing recovery).

It is to be noted that the present invention is not restricted to theforegoing embodiment. The foregoing embodiment is an illustrativeexample, and any example which has substantially the same configurationand exerts the same functions and effect as the technical scopedescribed claims of the present invention is included in the technicalscope of the present invention.

1.-8. (canceled)
 9. A method for evaluating a semiconductor substratesubjected to a defect recovery heat treatment to recover a crystaldefect in the semiconductor substrate having the crystal defect, flashlamp annealing being performed as the defect recovery heat treatment,the method comprising steps of: measuring the crystal defect in thesemiconductor substrate, which is being recovered, by controllingtreatment conditions for the flash lamp annealing; and analyzing arecovery mechanism of the crystal defect on the basis of a result of themeasurement.
 10. The method for evaluating a semiconductor substrateaccording to claim 9, wherein, at the step of performing themeasurement, a measurement is further performed after recovery of thecrystal defect.
 11. The method for evaluating a semiconductor substrateaccording to claim 9, wherein the treatment condition for the flash lampannealing to be changed is a heat treatment time or irradiation energy.12. The method for evaluating a semiconductor substrate according toclaim 10, wherein the treatment condition for the flash lamp annealingto be changed is a heat treatment time or irradiation energy.
 13. Themethod for evaluating a semiconductor substrate according to claim 9,wherein the crystal defect is an ion implantation defect produced byimplanting ions into the semiconductor substrate.
 14. The method forevaluating a semiconductor substrate according to claim 10, wherein thecrystal defect is an ion implantation defect produced by implanting ionsinto the semiconductor substrate.
 15. The method for evaluating asemiconductor substrate according to claim 11, wherein the crystaldefect is an ion implantation defect produced by implanting ions intothe semiconductor substrate.
 16. The method for evaluating asemiconductor substrate according to claim 12, wherein the crystaldefect is an ion implantation defect produced by implanting ions intothe semiconductor substrate.
 17. The method for evaluating asemiconductor substrate according to claim 10, wherein, at the step ofperforming the measurement, a state before an emission line produced dueto the crystal defect provided by a luminescence method is annihilatedis measured at least once, and also a state after the emission line isannihilated is measured.
 18. The method for evaluating a semiconductorsubstrate according to claim 11, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 19. The method for evaluating a semiconductor substrateaccording to claim 12, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 20. The method for evaluating a semiconductor substrateaccording to claim 13, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 21. The method for evaluating a semiconductor substrateaccording to claim 14, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 22. The method for evaluating a semiconductor substrateaccording to claim 15, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 23. The method for evaluating a semiconductor substrateaccording to claim 16, wherein, at the step of performing themeasurement, a state before an emission line produced due to the crystaldefect provided by a luminescence method is annihilated is measured atleast once, and also a state after the emission line is annihilated ismeasured.
 24. The method for evaluating a semiconductor substrateaccording to claim 17, wherein the luminescence method is a cathodeluminescence method.
 25. The method for evaluating a semiconductorsubstrate according to claim 17, wherein, at the step of performing theanalysis, the recovery mechanism is analyzed by observing a change inintensity of the emission line.
 26. The method for evaluating asemiconductor substrate according to claim 9, wherein the semiconductorsubstrate is a silicon semiconductor substrate.